JPH0554710B2 - - Google Patents

Info

Publication number
JPH0554710B2
JPH0554710B2 JP60217674A JP21767485A JPH0554710B2 JP H0554710 B2 JPH0554710 B2 JP H0554710B2 JP 60217674 A JP60217674 A JP 60217674A JP 21767485 A JP21767485 A JP 21767485A JP H0554710 B2 JPH0554710 B2 JP H0554710B2
Authority
JP
Japan
Prior art keywords
pressure
sensor
substrate
diaphragm
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60217674A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6276785A (ja
Inventor
Susumu Sugyama
Takashi Suzuki
Mitsuharu Takigawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toyota Central R&D Labs Inc
Original Assignee
Toyota Central R&D Labs Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyota Central R&D Labs Inc filed Critical Toyota Central R&D Labs Inc
Priority to JP60217674A priority Critical patent/JPS6276785A/ja
Priority to US06/911,245 priority patent/US4766666A/en
Publication of JPS6276785A publication Critical patent/JPS6276785A/ja
Priority to US07/154,648 priority patent/US4771638A/en
Publication of JPH0554710B2 publication Critical patent/JPH0554710B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Force Measurement Appropriate To Specific Purposes (AREA)
  • Pressure Sensors (AREA)
JP60217674A 1985-09-30 1985-09-30 圧力分布検出装置 Granted JPS6276785A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60217674A JPS6276785A (ja) 1985-09-30 1985-09-30 圧力分布検出装置
US06/911,245 US4766666A (en) 1985-09-30 1986-09-24 Semiconductor pressure sensor and method of manufacturing the same
US07/154,648 US4771638A (en) 1985-09-30 1988-02-10 Semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60217674A JPS6276785A (ja) 1985-09-30 1985-09-30 圧力分布検出装置

Publications (2)

Publication Number Publication Date
JPS6276785A JPS6276785A (ja) 1987-04-08
JPH0554710B2 true JPH0554710B2 (en]) 1993-08-13

Family

ID=16707944

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60217674A Granted JPS6276785A (ja) 1985-09-30 1985-09-30 圧力分布検出装置

Country Status (1)

Country Link
JP (1) JPS6276785A (en])

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4914742A (en) * 1987-12-07 1990-04-03 Honeywell Inc. Thin film orthogonal microsensor for air flow and method
JP2760860B2 (ja) * 1989-09-06 1998-06-04 カヤバ工業株式会社 レベル測定装置
JPH0758235B2 (ja) * 1992-04-17 1995-06-21 株式会社エニックス マトリクス型面圧力分布検出素子
US11883768B2 (en) * 2018-07-31 2024-01-30 Corning Incorporated Methods and apparatus for plugging cells of ceramic structures and honeycomb filters
WO2020028035A1 (en) * 2018-07-31 2020-02-06 Corning Incorporated Methods and apparatus for plugging cells of ceramic structures and honeycomb filters
WO2020028018A1 (en) * 2018-07-31 2020-02-06 Corning Incorporated Methods and apparatus for plugging cells of ceramic structures and honeycomb filters
EP3987264A1 (en) 2019-06-24 2022-04-27 Albert-Ludwigs-Universität Freiburg Tactile sensor and method for operating a tactile sensor
CN114472590B (zh) * 2022-02-11 2024-08-16 青岛海云微电子科技有限公司 钣金冲压机用折弯冲头检测装置

Also Published As

Publication number Publication date
JPS6276785A (ja) 1987-04-08

Similar Documents

Publication Publication Date Title
US4766666A (en) Semiconductor pressure sensor and method of manufacturing the same
US4771638A (en) Semiconductor pressure sensor
US11808644B2 (en) Integrated piezoresistive and piezoelectric fusion force sensor
US6452427B1 (en) Dual output capacitance interface circuit
US6051853A (en) Semiconductor pressure sensor including reference capacitor on the same substrate
US4812888A (en) Suspended gate field effect semiconductor pressure transducer device
Chun et al. A high-performance silicon tactile imager based on a capacitive cell
US7861597B2 (en) High temperature transducer using SOI electronics
JPH05501159A (ja) 集積容量性圧力センサ及びその製造方法
US5537882A (en) Semiconductor sensor for detecting physical amount without thermal hypsteresis where output wiring is disposed in a stress insensitive direction
US20210148776A1 (en) Pressure sensors and method for forming a mems pressure sensor
WO1990006568A1 (en) Silicon tactile imaging array and method of making same
JPS5827277A (ja) 指紋センサ
GB2194344A (en) Pressure transducer and method of fabricating same
CN102235925A (zh) 具有垂直电馈通的电容式压力传感器及其制造方法
US6725725B1 (en) Micromechanical differential pressure sensor device
CN100451635C (zh) 物理量传感器
US10558286B2 (en) Array substrate, touch display panel, and touch display device thereof
JPH0554710B2 (en])
JP4040435B2 (ja) シリコン触覚センサ装置
TWI807688B (zh) 靜電電容式壓力感測器及使用此壓力感測器之壓力檢測方法
JP2789291B2 (ja) 圧力センサ
JPH04299871A (ja) 半導体圧力センサおよびその製造方法
Trieu et al. Fully CMOS compatible capacitive differential pressure sensors with on-chip programmabilities and temperature compensation
JPH0979928A (ja) 半導体圧力センサ装置